[24a-22A-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[24a-22A-6] Effect of annealing temperature on optical characteristics of GaAs-based Nanowires

〇Hidetoshi Hashimoto^1,3, Ryoga Iida^2,3, Takuto Goto^2,3, Keisuke Minehisa^1,3, Kaito Nakama^1,3, Fumitaro Ishikawa³ (1.Hokkaido Univ. Info., 2.Hokkaido Univ., 3.Hokkaido Univ. RCIQE)

Keywords:

semiconductor nanowire,molecular beam epitaxy,annealing