[24a-52A-1~9] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[24a-52A-1] Characterization of GaN epilayers grown on HVPE and OVPE substrates

〇Yu Furuhashi¹, Tatsuya Ishii¹, Shigeyoshi Usami², Yusuke Mori², Hirotaka Watanabe³, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano³, Masashi Kato¹ (1.Nagoya Inst. of Tech., 2.Osaka Univ, 3.Nagoya Univ.)

Keywords:

GaN