[24a-52A-1~9] 13.7 Compound and power devices, process technology and characterization | The 71st JSAP Spring Meeting 2024

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[24a-52A-1~9]13.7 Compound and power devices, process technology and characterization

Sun. Mar 24, 2024 9:00 AM - 11:30 AM JST
Sun. Mar 24, 2024 12:00 AM - 2:30 AM UTC

52A (Building No. 5)

Kenji Shiojima(Univ. of Fukui)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[24a-52A-1]Characterization of GaN epilayers grown on HVPE and OVPE substrates

〇Yu Furuhashi¹, Tatsuya Ishii¹, Shigeyoshi Usami², Yusuke Mori², Hirotaka Watanabe³, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano³, Masashi Kato¹ (1.Nagoya Inst. of Tech., 2.Osaka Univ, 3.Nagoya Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[24a-52A-2]In-situ nanobeam X-ray diffraction of vertical power devices on OVPE-GaN substrates

〇Yusuke Hayashi¹, Tohei Tohei¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Shigeyoshi Usami³, Masayuki Imanishi³, Yusuke Mori³, Akio Wakejima⁴, Hirotaka Watanabe⁵, Shugo Nitta⁵, Yoshio Honda⁵, Hiroshi Amano⁵, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.JASRI, 4.NITech, 5.IMaSS Nagoya Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[24a-52A-3]Thermal annealing behavior of nitrogen-displacement-related traps located at around E_C – 1 eV introduced by EB irradiation in homoepitaxial n-type GaN

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[24a-52A-4]Identification of deep levels originating from nitrogen interstitial in homoepitaxial n-type GaN

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda¹ (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[24a-52A-5]Electrical characteristics of p-n diodes fabricated by N/Mg ion implantation on freestanding GaN substrates with different through-dislocation densities

〇(D)Yuta Ito¹, Woong Kwon¹, Seiya Kawasaki¹, Hirotaka Watanabe², Deki Manato³, Nitta Shugo², Honda Yoshio^2,3,4, Tanaka Atsushi², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D. Nagoya Univ., 4.IAR Nagoya Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-52A-6]Impact on IV characteristics of n-GaN schottky barrier diode by high temperature annealing

〇Woong Kwon¹, Yuta Itoh¹, Seiya Kawasaki¹, Hirotaka Watanabe², Atsushi Tanaka², Yoshio Honda^2,3,4, Hiroshi Amano^3,2,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Dcenter Nagoya Univ., 4.IAR Nagoya Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-52A-7]Relationship between Effective Donor Density Variation and Electron Trap Density with Long Capture Time Constant in Oxygen Ion Implanted n-type GaN

〇Keisuke Hayashi¹, Masahiro Horita^1,2, Ryo Tanaka³, Shinya Takashima³, Katsunori Ueno³, Jun Suda^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, 3.Fuji elec.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-52A-8]Exploration of growth conditions and microstructural analysis of MBE homoepitaxial layers on sputter-annealed AlN

〇Kaito Nishimura¹, Yusuke Hayashi¹, Tetsuya Touhei¹, Yongjin Cho², Jimy Encomendero³, Huili (Grace) Xing³, Debdeep Jena³, Hideto Miyake⁴, Akira Sakai¹ (1.Osaka Univ., 2.PDI., 3.Cornell Univ., 4.Mie Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[24a-52A-9]Evaluation of gap states in AlSiO/AlN/p-type GaN MOSFETs using the multi-terminal C–V methods

〇Tetsuo Narita¹, Kenji Ito¹, Hiroko Iguchi¹, Shiro Iwasaki¹, Kazuyoshi Tomita², Daigo Kikuta¹ (1.Toyota CRDL, 2.Nagoya Univ.)

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