[24a-52A-1~9] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[24a-52A-5] Electrical characteristics of p-n diodes fabricated by N/Mg ion implantation on freestanding GaN substrates with different through-dislocation densities

〇(D)Yuta Ito¹, Woong Kwon¹, Seiya Kawasaki¹, Hirotaka Watanabe², Deki Manato³, Nitta Shugo², Honda Yoshio^2,3,4, Tanaka Atsushi², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D. Nagoya Univ., 4.IAR Nagoya Univ.)

Keywords:

Mg ion implantation,power device

Local p-type conductivity control of GaN using Mg ion implantation is an essential technique for fabricating vertical power devices. In this study, N/Mg ion-implanted p-n junction diodes (PNDs) were fabricated and evaluated using freestanding GaN substrates with different dislocation densities.