[24a-52A-1~9] 13.7 Compound and power devices, process technology and characterization

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-52A-6] Impact on IV characteristics of n-GaN schottky barrier diode by high temperature annealing

〇Woong Kwon¹, Yuta Itoh¹, Seiya Kawasaki¹, Hirotaka Watanabe², Atsushi Tanaka², Yoshio Honda^2,3,4, Hiroshi Amano^3,2,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Dcenter Nagoya Univ., 4.IAR Nagoya Univ.)

Keywords:

Schottky Barrier Diode,High temperature anneal,Reverse leakage current

The IV characteristics of n-GaN Schottky barrier diodes (SBDs) annealed at high temperatures with AlN protective films were investigated. In the case of SBDs annealed above 1200°C, a decrease in Schottky barrier height and an increase in reverse leakage current were observed. In addition, PL measurements showed that YL intensity was proportional to the leakage current. Therefore, during selective p-GaN formation, it is necessary to pay attention to the degradation of electrical characteristics caused by the increase of defects in n-GaN due to high-temperature annealing.