[24a-52A-1~9] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-52A-8] Exploration of growth conditions and microstructural analysis of MBE homoepitaxial layers on sputter-annealed AlN

〇Kaito Nishimura¹, Yusuke Hayashi¹, Tetsuya Touhei¹, Yongjin Cho², Jimy Encomendero³, Huili (Grace) Xing³, Debdeep Jena³, Hideto Miyake⁴, Akira Sakai¹ (1.Osaka Univ., 2.PDI., 3.Cornell Univ., 4.Mie Univ.)

Keywords:

nitride semiconductor,MBE,TEM

Nitride semiconductors have been actively applied to high-voltage and high-speed communication transistors because of their high breakdown voltage electric field and electron mobility. In this study, we investigated the growth conditions of AlN molecular beam epitaxy (MBE) on sputter-annealed AlN (FFA Sp-AlN) and microstructural analysis of the grown surface and layer structures for the monolithic integration of n- and p-channel transistors using GaN/AlN two-dimensional carrier gas structures.