[24a-61B-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-61B-7] Local realization of substrate bias contribution degree on film properties of carbon hard mask

〇Yusuke Ando¹, Hiroki Kondo², Takayoshi Tsutsumi³, Kenji Ishikawa³, Makoto Sekine³, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Kyushu Univ. ISEE, 3.Nagoya Univ. cLPS)

Keywords:

a-C,machine learning,PECVD

This research focues on the elucidation of growth mechanism of amorphous cabon hard mask to achieve both higher plasma etch resistance and lower internal stress, which are generally in trade-off relationship. The a-C film optimized to have high etch resistance using machine learning showed comparatively lower internal stress. In the presentation, film property manifestation mechanism is discussed based on mass analysis and multiple film properties measurements.