[24p-12F-1~7] 15.7 Crystal characterization, impurities and crystal defects

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-12F-3] Dislocation behavior in neck portions in <110> oriented CZ-Si single crystals

〇Hisashi Matsumura^1,2, Shingo Narimatsu¹, Hiroyuki Saito¹, Yuki Fukui², Toshinori Taishi² (1.GlobalWafers Japan, 2.Shinshu Univ.)

Keywords:

Silicon,Dislocation