[24p-12F-1~7] 15.7 Crystal characterization, impurities and crystal defects | The 71st JSAP Spring Meeting 2024

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Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[24p-12F-1~7]15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 24, 2024 1:30 PM - 3:45 PM JST
Sun. Mar 24, 2024 4:30 AM - 6:45 AM UTC

12F (Building No. 1)

Hidetoshi Suzuki(Miyazaki Univ.), Haruo Sudo(GlobalWafers)

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[24p-12F-1][The 45th Paper Award Speech] Segregation sites for oxygen impurities at grain boundaries in Si revealed by LT-FIB

〇Yutaka Ohno¹, Hideto Yoshida², Shingo Tanaka³, Masanori Kohyama³, Koji Inoue¹, Yasuo Shimizu¹, Yasuyoshi Nagai¹ (1.IMR, Tohoku Univ., 2.SANKEN, Osaka Univ., 3.AIST)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[24p-12F-2]Formation process and function of asymmetric grain boundaries in silicon

〇Yutaka Ohno¹, Hikaru Saito², Jianbo Liang³, Naoteru Shigekawa³, Tatsuya Yokoi⁴, Katsuyuki Matsunaga⁴, Koji Inoue¹, Yasuyoshi Nagai¹, Satoshi Hata⁵ (1.IMR, Tohoku Univ., 2.IMCE, Kyushu Univ., 3.GSE, OMU, 4.GSE, Nagoya Univ., 5.IGSES, Kyushu Univ)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-12F-3]Dislocation behavior in neck portions in <110> oriented CZ-Si single crystals

〇Hisashi Matsumura^1,2, Shingo Narimatsu¹, Hiroyuki Saito¹, Yuki Fukui², Toshinori Taishi² (1.GlobalWafers Japan, 2.Shinshu Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[24p-12F-4]Three-dimensional structure of threading screw dislocation in 4H-SiC using 3D µ-X-ray topography

〇Kotaro Ishiji¹, Akio Yoneyama^1,2, Masayuki Inaba³, Kazunori Fukuda⁴, Atsushi Sakaki⁵, Shinya Ohmagari⁶, Ryuichi Sugie⁷ (1.SAGA-LS, 2.Hitachi, 3.Nissan ARC, 4.Kobelco RI, 5.Nichia, 6.AIST, 7.Toray RC)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[24p-12F-5]Quality of silicon substrate and point defects/2-nd generation (10) Segregation of isotopes and intrinsic point defects

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research center)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[24p-12F-6]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal/ 2-nd generation (24) Power device performance of NFZ-Si and VNs

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research center)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[24p-12F-7]Measurement of carbon concentration in silicon crystal/ 2-nd generation (27) Fractional phonon bands in infrared absorption, separation and low T measurement

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Metropolitan Univ. Radiation Research center)

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