Presentation Information
[24p-12F-5]Quality of silicon substrate and point defects/2-nd generation (10) Segregation of isotopes and intrinsic point defects
〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
Keywords:
silicon crystal,isotope,segregation coefficient
Silicon crystal serves the brain and neural network and the heart and blood network of the society. The Avogadro crystal replaced the kilogram protocol in 2019, becoming the base of the science and human activity. Grown-in defects includes intrinsic point defects, oxygen, carbon and nitrogen impurities and the effect of heat transfer and internal stress. Three research directions have been proposed:(1) Secondary effects such as internal stress effects, for example by dopants and thermal nonuniformity. Theoretical works are needed. (2) Local phenomena rather than the averaged and apparent behavior. Relation between the carbon concentration and lattice parameter is only on averaged values. We proposed using the high-resolution measurement of lattice parameter. Improvement of resolution is necessary. (3) Effect of lower concentration entities. Point defects, grown-in defects and isotope inhomogeneity. Measurement and analysis on segregation are worth examining.