[24p-12F-1~7] 15.7 Crystal characterization, impurities and crystal defects

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[24p-12F-6] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal/ 2-nd generation (24) Power device performance of NFZ-Si and VNs

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research center)

Keywords:

silicon crystal,infrared absorption,nitrogen

By low temperature annealing of N-FZ Si, deep levels were formed and lifetime decreased. Recently it was shown to degrade power device performance. Previously we studied N-V complexes by introducing point defects and IR absorption. We found that both 689 and 685 cm-1 absorption appeared by annealing and assigned them to be VVNN and VNs, respectively. As the former is included in as-grown crystal, we attributed the phenomenon to VNs.