[24p-12G-1~14] 6.3 Oxide electronics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[24p-12G-1] Proton diffusion governed resistance switching in low-cost planar H_xSmNiO₃ designed device

Keito Umesaki¹, 〇Haobo Li¹, Azusa.N Hattori¹, Hidekazu Tanaka¹ (1.Osaka Univ. SANKEN)

Keywords:

Strongly-correlated material,Proton device,Resistance switching

In this study, perovskite-type rare-earth SmNiO₃ epitaxial thin films are prepared and a low-cost planar device is designed. Comparing with previous reported stack-designed device with SrRuO₃ or Nb:SrTiO₃ as bottom electrode, or planar design requiring two materials (e.g. Au and Pt), our device only requires electron-beam fabriacted Pt and the asymetry of electrode shape brings about resistance switching larger than ~10² and micrometer scale (Figure 1). More importantly, the planar design is much easier to apply strain modulation where electrode buffer layer is not necessary. Top-view observation is also applicable and this would be helpful to reveal the proton diffusion mechanism of the H-ReNiO₃ devices. Hence this work could be a good platform for fundamental research on electric-field control of proton migration in protonated strongly correlated materials. At current stage, although the mechanism of resistance switching in our device is still under investigation, the higher ON/OFF ratio and fast response speed can be expected when gap size is reduced to nanometer scale. From the viewpoint of applications, the planar design could be compatible with both mechanical engineering and complex algorithm such as neuro networks and eventually contributes to realization of low-cost Beyond CMOS devices.