[24p-12G-1~14] 6.3 Oxide electronics | The 71st JSAP Spring Meeting 2024

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Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[24p-12G-1~14]6.3 Oxide electronics

Sun. Mar 24, 2024 1:30 PM - 5:15 PM JST
Sun. Mar 24, 2024 4:30 AM - 8:15 AM UTC

12G (Building No. 1)

Hisashi Shima(AIST), Yusuke Kozuka(NIMS)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[24p-12G-1]Proton diffusion governed resistance switching in low-cost planar H_xSmNiO₃ designed device

Keito Umesaki¹, 〇Haobo Li¹, Azusa.N Hattori¹, Hidekazu Tanaka¹ (1.Osaka Univ. SANKEN)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-12G-2]Study of proton confinement in WO₃two-terminal device by changing atmosphere

〇Masaki Tsuji¹, Kazuya Tsuruda¹, Satya Prakash Pati², Takeaki Yajima¹ (1.Kyushu Univ., 2.North-earthtan hill Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-12G-3]Short-term memory devices using reversible proton transfer at the Pd/MoO₃ interface

〇Kazuya Tsuruda¹, Masaki Tsuji¹, Satya Prakash Pati², Takeaki Yajima¹ (1.Kyushu Univ., 2.North-Eastern Hill Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-12G-4]Room-Temperature Current-Induced Transition in Ca₂RuO₄ Thin Films Grown Based on Interstitial Cation Diffusion in the Ruddlesden–Popper Structure

〇Atsushi Tsurumaki-Fukuchi¹, Takayoshi Katase², Toshio Kamiya² (1.Faculty of IST, Hokkaido Univ., 2.MDXES, Tokyo Tech.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[24p-12G-5]CeO₂-based Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Width

〇(PC)Ahrong Jeong¹, Zhiping Bian², Mitsuki Yoshimura², Bin Feng³, Yuichi Ikuhara³, Yusaku Magari¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.IST-Hokkaido Univ., 3.Univ. Tokyo)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-12G-6]Fabrication of Solid-State Thermal Transistors based on High Electron Thermal Conductivity LaNiO₃ Films as Active Layers

〇(M1)Mitsuki Yoshimura¹, Haobo Li², Zhiping Bian¹, Ahrong Jeoung³, Yusaku Magari³, Hidekazu Tanaka², Hiromichi Ohta³ (1.IST-Hokkaido Univ., 2.SANKEN-Osaka Univ., 3.RIES-Hokkaido Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-12G-7]The evaluation of incubation time in VO₂ thermally induced phase transition
by microheater heating

〇Satoshi Hamasuna¹, Satya Prakash Pati^1,2, Takeaki Yajima¹ (1.Kyushu Univ., 2.North-Eastern Hill University)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-12G-8]Direct Observation of Electronic Phase Transitions in VO₂/W:VO₂ (110)_R Heterostructures

〇Seitaro Inoue¹, Daisuke Shiga^1,2, Ryotaro Hayasaka¹, Tassaphon Tirasutt¹, Sogen Watanabe¹, Naoto Hasegawa¹, Kenichi Ozawa², Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[24p-12G-9]First-principles prediction of interface atomic structure on VO₂/hBN heterostructure interface

〇Mitsuharu Uemoto¹, Wakil Hasan¹, Boyuan Yu², Azusa Hattori², Hidekazu Tanaka², Tomoya Ono¹ (1.Kobe University, 2.Osaka University)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[24p-12G-10]Ultrathin Freestanding Membranes of Ferroelectric Hafnia

〇Yufan Shen¹, Kousuke Ooe², Tomoaki Yamada^3,4, Shunsuke Kobayashi², Mitsutaka Haruta¹, Yuichi Shimakawa¹ (1.Kyoto Univ. ICR, 2.JFCC, 3.Nagoya Univ, 4.Tokyo Tech. MDXES)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

The 71st JSAP Spring Meeting 2024

Session Details

[24p-12G-1~14]6.3 Oxide electronics

[24p-12G-1]Proton diffusion governed resistance switching in low-cost planar H_xSmNiO₃ designed device

[24p-12G-2]Study of proton confinement in WO₃two-terminal device by changing atmosphere

[24p-12G-3]Short-term memory devices using reversible proton transfer at the Pd/MoO₃ interface

[24p-12G-4]Room-Temperature Current-Induced Transition in Ca₂RuO₄ Thin Films Grown Based on Interstitial Cation Diffusion in the Ruddlesden–Popper Structure

[24p-12G-5]CeO₂-based Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Width

[24p-12G-6]Fabrication of Solid-State Thermal Transistors based on High Electron Thermal Conductivity LaNiO₃ Films as Active Layers

[24p-12G-7]The evaluation of incubation time in VO₂ thermally induced phase transition
by microheater heating

[24p-12G-8]Direct Observation of Electronic Phase Transitions in VO₂/W:VO₂ (110)_R Heterostructures

[24p-12G-9]First-principles prediction of interface atomic structure on VO₂/hBN heterostructure interface

[24p-12G-10]Ultrathin Freestanding Membranes of Ferroelectric Hafnia

[24p-12G-11]A study of amorphous SrCO₃ sacrificed layer for water lift-off process

[24p-12G-12]Fabrication of CuFeO₂ films by pulsed-laser deposition using targets with Cu(II)

[24p-12G-13]Effects of alkali metal doping on current amplification of titanium oxide thin film transistors

[24p-12G-14]Hydrothermal Synthesis of Magnetic Spinel ZnFe₂O₄ and the Application in Photocatalytic Degradation

Session Details

[24p-12G-1~14]6.3 Oxide electronics

[24p-12G-1]Proton diffusion governed resistance switching in low-cost planar HxSmNiO3 designed device

[24p-12G-2]Study of proton confinement in WO3 two-terminal device by changing atmosphere

[24p-12G-3]Short-term memory devices using reversible proton transfer at the Pd/MoO3 interface

[24p-12G-4]Room-Temperature Current-Induced Transition in Ca2RuO4 Thin Films Grown Based on Interstitial Cation Diffusion in the Ruddlesden–Popper Structure

[24p-12G-5]CeO2-based Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Width

[24p-12G-6]Fabrication of Solid-State Thermal Transistors based on High Electron Thermal Conductivity LaNiO3 Films as Active Layers

[24p-12G-7]The evaluation of incubation time in VO2 thermally induced phase transition by microheater heating

[24p-12G-8]Direct Observation of Electronic Phase Transitions in VO2/W:VO2 (110)R Heterostructures

[24p-12G-9]First-principles prediction of interface atomic structure on VO2/hBN heterostructure interface

[24p-12G-10]Ultrathin Freestanding Membranes of Ferroelectric Hafnia

[24p-12G-11]A study of amorphous SrCO3 sacrificed layer for water lift-off process

[24p-12G-12]Fabrication of CuFeO2 films by pulsed-laser deposition using targets with Cu(II)

[24p-12G-13]Effects of alkali metal doping on current amplification of titanium oxide thin film transistors

[24p-12G-14]Hydrothermal Synthesis of Magnetic Spinel ZnFe2O4 and the Application in Photocatalytic Degradation

[24p-12G-1]Proton diffusion governed resistance switching in low-cost planar H_xSmNiO₃ designed device

[24p-12G-2]Study of proton confinement in WO₃two-terminal device by changing atmosphere

[24p-12G-3]Short-term memory devices using reversible proton transfer at the Pd/MoO₃ interface

[24p-12G-4]Room-Temperature Current-Induced Transition in Ca₂RuO₄ Thin Films Grown Based on Interstitial Cation Diffusion in the Ruddlesden–Popper Structure

[24p-12G-5]CeO₂-based Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Width

[24p-12G-6]Fabrication of Solid-State Thermal Transistors based on High Electron Thermal Conductivity LaNiO₃ Films as Active Layers

[24p-12G-7]The evaluation of incubation time in VO₂ thermally induced phase transition
by microheater heating

[24p-12G-8]Direct Observation of Electronic Phase Transitions in VO₂/W:VO₂ (110)_R Heterostructures

[24p-12G-9]First-principles prediction of interface atomic structure on VO₂/hBN heterostructure interface

[24p-12G-11]A study of amorphous SrCO₃ sacrificed layer for water lift-off process

[24p-12G-12]Fabrication of CuFeO₂ films by pulsed-laser deposition using targets with Cu(II)

[24p-12G-14]Hydrothermal Synthesis of Magnetic Spinel ZnFe₂O₄ and the Application in Photocatalytic Degradation