講演情報
[24p-12G-1]Proton diffusion governed resistance switching in low-cost planar HxSmNiO3 designed device
Keito Umesaki1, 〇Haobo Li1, Azusa.N Hattori1, Hidekazu Tanaka1 (1.Osaka Univ. SANKEN)
キーワード：
Strongly-correlated material、Proton device、Resistance switching
In this study, perovskite-type rare-earth SmNiO3 epitaxial thin films are prepared and a low-cost planar device is designed. Comparing with previous reported stack-designed device with SrRuO3 or Nb:SrTiO3 as bottom electrode, or planar design requiring two materials (e.g. Au and Pt), our device only requires electron-beam fabriacted Pt and the asymetry of electrode shape brings about resistance switching larger than ~102 and micrometer scale (Figure 1). More importantly, the planar design is much easier to apply strain modulation where electrode buffer layer is not necessary. Top-view observation is also applicable and this would be helpful to reveal the proton diffusion mechanism of the H-ReNiO3 devices. Hence this work could be a good platform for fundamental research on electric-field control of proton migration in protonated strongly correlated materials. At current stage, although the mechanism of resistance switching in our device is still under investigation, the higher ON/OFF ratio and fast response speed can be expected when gap size is reduced to nanometer scale. From the viewpoint of applications, the planar design could be compatible with both mechanical engineering and complex algorithm such as neuro networks and eventually contributes to realization of low-cost Beyond CMOS devices.