Presentation Information
[24p-12K-2]Preparation of epitaxial Mg3Sb2 thin film on c-Al2O3 substrate
〇(D)Akito Ayukawa1, Nozomu Kiridoshi1, Shimon Watahiki1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)
Keywords:
Thermoelectric materials,Zintl phase,Epitaxial growth
Thin-film thermoelectric materials are expected to be applied to small stand-alone power sources using waste heat that can be used for IoT and other applications. Among these, Mg3Sb2-based materials have attracted attention as materials with high performance near room temperature. Mg3Sb2 has a characteristic layered structure in the c-axis direction and high thermoelectric properties are predicted in the in-plane direction, so epitaxial thin films oriented in the c-plane are required. The aim of this study is to establish a method for the preparation of epitaxial Mg3Sb2 thin films by molecular beam epitaxy for thermoelectric applications.