[24p-12K-1~7] 13.2 Exploratory Materials, Physical Properties, Devices | The 71st JSAP Spring Meeting 2024

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Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[24p-12K-1~7]13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 24, 2024 1:30 PM - 3:15 PM JST
Sun. Mar 24, 2024 4:30 AM - 6:15 AM UTC

12K (Building No. 1)

Kosuke Hara(Univ. of Yamanashi)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[24p-12K-1]Characterization and first-principles calculations of AgBa₂Si₃ for thermoelectric applications

〇Kimimaru Kajihara¹, Takamitsu Ishiyama¹, Sho Aonuki¹, Kaoru Toko¹, Yoichiro Koda², Masami Mesuda², Shuta Honda³, Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.Tosoh Corporation, 3.Kansai Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-12K-2]Preparation of epitaxial Mg₃Sb₂ thin film on c-Al₂O₃ substrate

〇(D)Akito Ayukawa¹, Nozomu Kiridoshi¹, Shimon Watahiki¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[24p-12K-3]Electronic structure of SrSi₂

〇Motoharu Imai¹, Babak Alinejad², Haruhiko Udono², Hiroki Takahashi³, Masao Arai¹ (1.NIMS, 2.Ibaraki Univ., 3.Nihon Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-12K-4]Fabrication of Bi₂Se₃/CdSe/Bi₂Se₃ structures by van der Waals epitaxy

〇Ryuya Kotabe¹, Yuta Yamagata¹, Terai Yoshikazu¹ (1.Kyushu Inst. of Tech.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[24p-12K-5]Electronic structure of 3d-transition-metal disilicides

〇Motoharu Imai¹ (1.NIMS)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[24p-12K-6]Dependence of electrical conduction properties on Ru composition in β-(Fe_1-xRu_x)Si₂ polycrystalline films

〇Yutaka Sakurai¹, Takumi Takahashi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[24p-12K-7]Initial growth temperature dependence of Ge in-plane strain in Ge/β-FeSi₂ thin films

〇Shintaro Ishitobi¹, Sohichiro Nagatomo¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

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Session Details

[24p-12K-1~7]13.2 Exploratory Materials, Physical Properties, Devices

[24p-12K-1]Characterization and first-principles calculations of AgBa2Si3 for thermoelectric applications

[24p-12K-2]Preparation of epitaxial Mg3Sb2 thin film on c-Al2O3 substrate

[24p-12K-3]Electronic structure of SrSi2

[24p-12K-4]Fabrication of Bi2Se3/CdSe/Bi2Se3 structures by van der Waals epitaxy