[24p-12K-1~7] 13.2 Exploratory Materials, Physical Properties, Devices

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-12K-4] Fabrication of Bi₂Se₃/CdSe/Bi₂Se₃ structures by van der Waals epitaxy

〇Ryuya Kotabe¹, Yuta Yamagata¹, Terai Yoshikazu¹ (1.Kyushu Inst. of Tech.)

Keywords:

topological insulator,Bi2Se3,CdSe

Topological insulator Bi₂Se₃ exhibits gapless, high-mobility, spin-polarized topological electronic states on its surface, which are strongly affected by surface oxidation. Therefore, our ultimate goal is to fabricate CdSe/Bi₂Se₃ superlattices. In the previous report, we examined the growth of CdSe /Bi₂Se₃ on Si(111) substrates, and in this study, we examine the growth temperature dependence of Bi₂Se₃/CdSe/Bi₂Se₃ growth.