[24p-12K-1~7] 13.2 Exploratory Materials, Physical Properties, Devices

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[24p-12K-6] Dependence of electrical conduction properties on Ru composition in β-(Fe_1-xRu_x)Si₂ polycrystalline films

〇Yutaka Sakurai¹, Takumi Takahashi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:

Silicide semiconductors,Mixed crystal,Electrical Conduction Mechanism

We have focused on Ru-doped β-FeSi₂ to control the band structure of the silicide semiconductor β-FeSi₂. We have succeeded in fabricating polycrystalline β-(Fe_1-xRu_x)Si₂ thin films up to x=0.71 by sputtering method, and have confirmed that the Ru-doping increases the 1.5 µm emission intensity. However, the effect of Ru-doping on the electrical conduction properties has not yet been verified. In this study, we evaluated the electrical conduction properties of β-(Fe_1-xRu_x)Si₂ polycrystalline thin films.