Presentation Information
[24p-12K-7]Initial growth temperature dependence of Ge in-plane strain in Ge/β-FeSi2 thin films
〇Shintaro Ishitobi1, Sohichiro Nagatomo1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)
Keywords:
crystal,germanium,strain
The group-IV semiconductor Ge is an indirect transition semiconductor, but it is predicted to become a direct transition semiconductor by introducing 2% tensile strain. We have successfully introduced about 0.7% tensile strain into Ge/β-FeSi2 thin films by heat treatment. However, there is a possibility that the tensile strain is relaxed by dislocations. In this study, the dependence of the in-plane strain on the Ge initial growth temperature was verified, expecting a reduction in dislocations in the Ge layer by lowering the Ge initial growth temperature.