[24p-1BJ-1~9] Beyond Graphene

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[24p-1BJ-9] A 2D semiconductor growth on a graphene ultrathin gate structure

Hideaki Sugino¹, Fuminori Sasaki¹, Kazuki Yonekubo¹, Toshifumi Irisawa², Takeo Matsuki², Daisuke Ohori³, Kazuhiko Endo³, Issei Watanabe⁴, 〇Hirokazu Fukidome¹ (1.RIEC, Tohoku Univ., 2.AIST, 3.IFS, Tohoku Univ., 4.NICT)

Keywords:

2D semiconductor,graphene,ultrashor gate

We are doing R&D for realizing a transistor with a ultrashor gate. In this presentation, we wiil present a study on the growth of few-layer WS₂ on the ultrathin graphene gate. Cross-sectional TEM and EDX observation demonstrated that we succeeded in fabricating the structure consisting of the ultrashort graphene gate, the Al₂O₃ gate dielectric, and few-layer WS2, without the use of the so-called transfer method.