Session Details

[24p-1BJ-1~9]Beyond Graphene

Sun. Mar 24, 2024 1:30 PM - 5:45 PM JST
Sun. Mar 24, 2024 4:30 AM - 8:45 AM UTC
1BJ (Building No. 1)
Yui ogawa(NTT BRL), Masamichi Naitoh(Kyutech)

[24p-1BJ-1]New frontier of “2.5D Materials science” based on 2D materials

〇Hiroki Ago1,2 (1.Kyushu Univ., GIC, 2.Kyushu Univ., IGSES)

[24p-1BJ-2]High quality synthesis and Janus formation of 2D materials by in-situ monitoring processing

〇Toshiaki Kato1,2 (1.Grad. Sch. of Eng., Tohoku Univ., 2.AIMR, Tohoku Univ.)

[24p-1BJ-3]Moiré Optical Science and Application of Two-dimensional Artificial Heterostructures

〇Kazunari Matsuda1 (1.IAE, Kyoto Univ.)

[24p-1BJ-4]Charge storage of 2D materials MXenes

〇Masashi Okubo1 (1.Waseda Univ.)

[24p-1BJ-5]Growth and Structure of Group 14 Post-Graphene Materials

〇Junji Yuhara1 (1.Nagoya Univ.)

[24p-1BJ-6]Emerging 2D world based on inorganic materials

〇Minoru Osada1 (1.IMaSS, Nagoya Univ.)

[24p-1BJ-7]Structural analysis and manipulation of low-dimensional materials
by scanning probe microscopy

〇Yoshiaki Sugimoto1 (1.Univ. Tokyo)

[24p-1BJ-8]Electronic state of powdered semiconductor r-BS studied by micro-ARPES

〇Katsuaki Sugawara1,2,3, Haruki Kusaka4, Tappei Kawakami1, Koki Yanagizawa1, Asuka Honma1, Seigo Souma2,5, Kosuke Nakayama1, Masashi Miyakawa6, Takashi Taniguchi6,7, Miho Kitamura8, Koji Horiba9, Hiroshi Kumigashira10, Takashi Takahashi1, Shin-ichi Orimo2,11, Masayuki Toyoda12, Susumu Saito12, Takahiro Kondo2,4, Takafumi Sato1,2,5,13 (1.Dept. Phys., Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.JST-PRESTO, 4.Dep. Mater. Sci., Univ. Tsukuba, 5.CSIS, Tohoku Univ., 6.NIMS, 7.NIMS-MANA, 8.KEK-IMSS-PF, 9.QST, 10.IMRAM, Tohoku Univ., 11.IMR, Tohoku Univ., 12.Dep. Phys., Tokyo Tech., 13.SRIS, Tohoku Univ.)

[24p-1BJ-9]A 2D semiconductor growth on a graphene ultrathin gate structure

Hideaki Sugino1, Fuminori Sasaki1, Kazuki Yonekubo1, Toshifumi Irisawa2, Takeo Matsuki2, Daisuke Ohori3, Kazuhiko Endo3, Issei Watanabe4, 〇Hirokazu Fukidome1 (1.RIEC, Tohoku Univ., 2.AIST, 3.IFS, Tohoku Univ., 4.NICT)