Presentation Information

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[24p-22A-5]Investigation of compositional changes and luminescence properties of InGaAs/GaAsSb/InGaAs Type-II quantum well on GaAs substrate

〇Koichiro Kunitake¹, Kazuki Usui¹, Rikuto Takashima¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:

semiconductor

In this study, we estimated the change in Sb composition by thinning GaAsSb in GaAs/GaAsSb/GaAs structures from X-ray diffraction (XRD) and evaluated photoluminescence (PL) of InGaAs/GaAsSb/InGaAs structures. As a result, it was confirmed that the Sb composition in the GaAs/GaAsSb/GaAs structure decreases as the GaAsSb is thinned. In the InGaAs/GaAsSb/InGaAs structure, it was also confirmed that the PL intensity decreased with thicker GaAsSb, although the PL intensity increased with longer wavelength.

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