Presentation Information

[24p-22A-5]Investigation of compositional changes and luminescence properties of InGaAs/GaAsSb/InGaAs Type-II quantum well on GaAs substrate

〇Koichiro Kunitake1, Kazuki Usui1, Rikuto Takashima1, Masakazu Arai1 (1.Univ. of Miyazaki)



In this study, we estimated the change in Sb composition by thinning GaAsSb in GaAs/GaAsSb/GaAs structures from X-ray diffraction (XRD) and evaluated photoluminescence (PL) of InGaAs/GaAsSb/InGaAs structures. As a result, it was confirmed that the Sb composition in the GaAs/GaAsSb/GaAs structure decreases as the GaAsSb is thinned. In the InGaAs/GaAsSb/InGaAs structure, it was also confirmed that the PL intensity decreased with thicker GaAsSb, although the PL intensity increased with longer wavelength.