[24p-22A-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[24p-22A-6] Growth of metamorphic InSb on GaAs (111)A: Effect of thin InAs interlayers

〇Takaaki Mano¹, Akihiro Ohtake¹ (1.NIMS)

Keywords:

GaAs,InSb,Metamorphic growth

By simply inserting very thin InAs interlayer, we successfully formed high quality InSb on GaAs (111)A. The defect structures are not visible and flat surface is observed in the AFM measurement. The InSb layer is almost lattice relaxed. The present study reveals that InAs interlayer is useful for the growth of InSb whose lattice constant is larger than InAs.