[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-52A-12] Analysis of dominant factors of nanosecond response lattice deformation in AlGaN/GaN HEMT

〇(M2)Masaya Yamaguchi¹, Akihiro Shimada¹, Yasuhiko Imai², Tetsuya Tohei¹, Yusuke Hayashi¹, Tamotsu Hashizume³, Kazushi Sumitani², Shigeru Kimura², Akira Sakai¹ (1.Osaka Univ., 2.JASRI, 3.IMaSS, Nagoya Univ.)

Keywords:

semiconductor,AlGaN/GaN HEMT,nanoXRD

In AlGaN/GaN high electron mobility transistor (HEMT) devices, it has been reported that the reverse piezoelectric effect is caused by the application of voltage during operation, and the lattice defects induced by the effect cause device degradation. In addition to this problem, thermal expansion due to self-heating effects is thought to exist also. Quantitative understanding of the contribution of these effects to the lattice strain induced during device operation is essential. In this study, the dynamic behavior of local lattice deformation in AlGaN/GaN HEMTs under operating conditions was investigated using an operando measurement technique based on nanobeam X-ray diffraction (nanoXRD) at SPring-8. The factors governing the lattice distortion during HEMT device operation were then analyzed.