[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization | The 71st JSAP Spring Meeting 2024

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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[24p-52A-1~19]13.7 Compound and power devices, process technology and characterization

Sun. Mar 24, 2024 1:00 PM - 6:15 PM JST
Sun. Mar 24, 2024 4:00 AM - 9:15 AM UTC

52A (Building No. 5)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[24p-52A-1]Performance improvement of GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

〇JIAWEI FAN¹, Miyamoto Yasuyuki¹, Arai Masakazu² (1.Tokyo Tech., 2.Miyazaki Univ.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[24p-52A-2]Reduction of intrinsic delay time in GaInSb HEMT by thinning the barrier layer

Rikuto Yoshida¹, 〇Ryosuke Kouno¹, Reo Ebihara¹, Tomoki Jinnai¹, Issei Watanabe^2,1, Yoshimi Yamashita², Ryuto Machida², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.National Institute of Info. & Com. Tech.)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-52A-3]Double doped GaInSb HEMT with f_T and f_max of over 300 GHz

〇Rikuto Yoshida¹, Ryosuke Kouno¹, Reo Ebihara¹, Tomoki Jinnai¹, Issei Watanabe^2,1, Yoshimi Yamashita², Ryuto Machida², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.National Institute of Info. & Com. Tech.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[24p-52A-4]Development of Photo Enhanced Chemical (PEC) Etching Process for Fabrication of Millimeter-wave GaN IMPATT Diodes

〇Hiroki Toyoda¹, Seiya Kawasaki¹, Yuta Furusawa², Ryoko Tsukamoto², Yoshio Honda², Hiroshi Amano² (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[24p-52A-5]Fabrication of GaN-on-diamond HEMT structures for low-cost and high heat dissipation

〇(M1)Hazuki Tomiyama¹, Hiroki Uratani², Yoshiki Sakaida², Yoshiki Nishibayashi³, Marika Takeuchi³, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Air Water Inc., 3.Sumitomo Electric Industries, Ltd.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-52A-6]Polarity inversion layer for improving the performance of N-polar GaN/AlN HEMT

〇Aina Hiyama Zazuli¹, Daisuke Inahara¹, Taketo Kowaki¹, Minagi Miyamoto¹, Koki Hanasaku¹, Kai Fujii¹, Ryosuke Ninoki¹, Sora Nagata¹, Taisei Kimoto¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[24p-52A-7]Optimization of GaN channel in N-polar GaN/AlN high electron mobility transistor

〇Kai Fujii¹, Teketo Kowaki¹, Minagi Miyamoto¹, Aina Hiyama Zazuli¹, Koki Hanasaku¹, Taisei Kimoto¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[24p-52A-8]Structural investigation of AlN-based polarization doped FETs

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[24p-52A-9]Characterization of Current Transport and Temperature-dependent Barrier height in Si-doped AlN Schottky Barrier Diodes fabricated on Semi-Insulating SiC Substrate

〇AKihira Munakata¹, Masanobu Hiroki², Kazuhide Kumakura², Yoshitaka Taniyasu², Yoshiaki Nakano¹, Takuya Maeda¹ (1.Univ. of Tokyo, 2.NTT Basic Research Lab.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[24p-52A-10]Multi-probe Hall measurements for Ohmic contacts to thin-AlGaN/GaN heterostructures with no two-dimensional electron gas

〇kazuya Uryu¹, Yuchen Deng², Takuma Nanjo³, Masayuki Furuhashi³, Kazuyasu Nishikawa³, Toshi-Kazu Suzuki² (1.ATL, 2.JAIST, 3.Mitsubishi Electric)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-52A-11]Measurement of Drift Velocity of 2DEG in AlGaN/GaN Heterostructure

〇(B)Yusuke Wakamoto¹, Takahiko Kawahara², Seki Yoshida², Kozo Makiyama², Ken Nakata², Yoshiaki Nakano¹, Takuya Maeda¹ (1.UTokyo, 2.Sumitomo Electric Industries, Ltd)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-52A-12]Analysis of dominant factors of nanosecond response lattice deformation in AlGaN/GaN HEMT

〇(M2)Masaya Yamaguchi¹, Akihiro Shimada¹, Yasuhiko Imai², Tetsuya Tohei¹, Yusuke Hayashi¹, Tamotsu Hashizume³, Kazushi Sumitani², Shigeru Kimura², Akira Sakai¹ (1.Osaka Univ., 2.JASRI, 3.IMaSS, Nagoya Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-52A-13]Investigation of saturation current increasing structure of source connected polarization superjunction transistor

〇(M2)Eito Kokubo¹, Hirotaka Watanabe², Manato Deki³, Atsushi Tanaka², Shugo Nitta², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.D Center, Nagoya Univ., 4.IAR, Nagoya Univ.)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[24p-52A-14]Development of 100-GHz-Band 1-Watt-Class GaN Power Amplifier MMICs

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Yasuhiro Nakasha¹, Naoya Okamoto¹, Atsushi Yamada¹, Toshihiro Ohki¹ (1.Fujitsu Ltd.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[24p-52A-18]Dependence on deposition temperature of surface morphology and electrical properties of heavily n-type GaN deposited by sputtering

〇Kiho Tanaka¹, Shinji Yamada¹, Manabu Arai², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[24p-52A-19]Effects of annealing on electrical properties of n-type GaN films deposited by sputtering

〇Shinji Yamada¹, Manabu Arai¹, Tetsu Kachi¹, Jun Suda¹ (1.Nagoya Univ.)

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The 71st JSAP Spring Meeting 2024

Session Details

[24p-52A-1~19]13.7 Compound and power devices, process technology and characterization

[24p-52A-1]Performance improvement of GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

[24p-52A-2]Reduction of intrinsic delay time in GaInSb HEMT by thinning the barrier layer

[24p-52A-3]Double doped GaInSb HEMT with f_T and f_max of over 300 GHz

[24p-52A-4]Development of Photo Enhanced Chemical (PEC) Etching Process for Fabrication of Millimeter-wave GaN IMPATT Diodes

[24p-52A-5]Fabrication of GaN-on-diamond HEMT structures for low-cost and high heat dissipation

[24p-52A-6]Polarity inversion layer for improving the performance of N-polar GaN/AlN HEMT

[24p-52A-7]Optimization of GaN channel in N-polar GaN/AlN high electron mobility transistor

[24p-52A-8]Structural investigation of AlN-based polarization doped FETs

[24p-52A-9]Characterization of Current Transport and Temperature-dependent Barrier height in Si-doped AlN Schottky Barrier Diodes fabricated on Semi-Insulating SiC Substrate

[24p-52A-10]Multi-probe Hall measurements for Ohmic contacts to thin-AlGaN/GaN heterostructures with no two-dimensional electron gas

[24p-52A-11]Measurement of Drift Velocity of 2DEG in AlGaN/GaN Heterostructure

[24p-52A-12]Analysis of dominant factors of nanosecond response lattice deformation in AlGaN/GaN HEMT

[24p-52A-13]Investigation of saturation current increasing structure of source connected polarization superjunction transistor

[24p-52A-14]Development of 100-GHz-Band 1-Watt-Class GaN Power Amplifier MMICs

[24p-52A-15]Fabrication of 100 nm Class AlGaN/GaN Dual-Gate HEMTs Using i-Line Stepper

[24p-52A-16]Electron state analysis under gate electrode in EID AlGaN/GaN MOS-HEMT

[24p-52A-17]Device Dependence of Failure Process of GaN-HEMTs by Overvoltage Stress

[24p-52A-18]Dependence on deposition temperature of surface morphology and electrical properties of heavily n-type GaN deposited by sputtering

[24p-52A-19]Effects of annealing on electrical properties of n-type GaN films deposited by sputtering

Session Details

[24p-52A-1~19]13.7 Compound and power devices, process technology and characterization

[24p-52A-1]Performance improvement of GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth

[24p-52A-2]Reduction of intrinsic delay time in GaInSb HEMT by thinning the barrier layer

[24p-52A-3]Double doped GaInSb HEMT with fT and fmax of over 300 GHz

[24p-52A-4]Development of Photo Enhanced Chemical (PEC) Etching Process for Fabrication of Millimeter-wave GaN IMPATT Diodes

[24p-52A-5]Fabrication of GaN-on-diamond HEMT structures for low-cost and high heat dissipation

[24p-52A-6]Polarity inversion layer for improving the performance of N-polar GaN/AlN HEMT

[24p-52A-7]Optimization of GaN channel in N-polar GaN/AlN high electron mobility transistor

[24p-52A-8]Structural investigation of AlN-based polarization doped FETs

[24p-52A-9]Characterization of Current Transport and Temperature-dependent Barrier height in Si-doped AlN Schottky Barrier Diodes fabricated on Semi-Insulating SiC Substrate

[24p-52A-10]Multi-probe Hall measurements for Ohmic contacts to thin-AlGaN/GaN heterostructures with no two-dimensional electron gas

[24p-52A-11]Measurement of Drift Velocity of 2DEG in AlGaN/GaN Heterostructure

[24p-52A-12]Analysis of dominant factors of nanosecond response lattice deformation in AlGaN/GaN HEMT

[24p-52A-13]Investigation of saturation current increasing structure of source connected polarization superjunction transistor

[24p-52A-14]Development of 100-GHz-Band 1-Watt-Class GaN Power Amplifier MMICs

[24p-52A-15]Fabrication of 100 nm Class AlGaN/GaN Dual-Gate HEMTs Using i-Line Stepper

[24p-52A-16]Electron state analysis under gate electrode in EID AlGaN/GaN MOS-HEMT

[24p-52A-17]Device Dependence of Failure Process of GaN-HEMTs by Overvoltage Stress

[24p-52A-18]Dependence on deposition temperature of surface morphology and electrical properties of heavily n-type GaN deposited by sputtering

[24p-52A-19]Effects of annealing on electrical properties of n-type GaN films deposited by sputtering

[24p-52A-1]Performance improvement of GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

[24p-52A-3]Double doped GaInSb HEMT with f_T and f_max of over 300 GHz