Presentation Information

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[24p-52A-14]Development of 100-GHz-Band 1-Watt-Class GaN Power Amplifier MMICs

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Yasuhiro Nakasha¹, Naoya Okamoto¹, Atsushi Yamada¹, Toshihiro Ohki¹ (1.Fujitsu Ltd.)

Keywords:

GaN,HEMT,Power amplifier

This paper presents the process technologies realizing 100-GHz-band 1-watt-class GaN power amplifier MMICs. We introduced SiN passivation film before selective-area growth (SAG), namely pre-SAG passivation process. The electric properties of GaN-HEMTs with pre-SAG passivation were improved compared to those without pre-SAG passivation. The power amplifier MMIC with pre-SAG passivation exhibited the power-added efficiency (PAE) of 17.1% and output power of 0.76 W (output power density of 2.4 W/mm) at operation voltage of 15 V, and PAE of 14.3% and output power of 1.0 W (output power density of 3.2 W/mm) at operation voltage of 20 V.

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