[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[24p-52A-15] Fabrication of 100 nm Class AlGaN/GaN Dual-Gate HEMTs Using i-Line Stepper

〇Yuji Ando^1,2, Ryutaro Makisako¹, Hidemasa Takahashi¹, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. Tech.)

Keywords:

GaN,HEMT

100 nm class AlGaN/GaN dual gate HEMTs were fabricated using a thermal reflow process. Fabricated dual gate devices showed excellent pinch-off characteristics due to their improved carrier confinement. Extrapolated fmax value from Mason's U was 150 and 240 GHz for single- and dual-gate devices, respectively. These results indicate the possibility of the dual-gate structure to improve gain characteristics of GaN-HEMTs at sub-THz frequencies.