[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[24p-52A-18] Dependence on deposition temperature of surface morphology and electrical properties of heavily n-type GaN deposited by sputtering

〇Kiho Tanaka¹, Shinji Yamada¹, Manabu Arai², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

gallium nitride,sputtering

In order to reduce the on-resistance of GaN vertical power devices, we are developing the technology to reduce contact resistance of heavily doped n-type GaN deposited by sputtering. In order to investigate the lower limit of the substrate temperature, assuming sputtering deposition at the end of the device manufacturing process, we changed the substrate temperature and evaluated the characteristics of the GaN films by sputtering.