[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[24p-52A-2] Reduction of intrinsic delay time in GaInSb HEMT by thinning the barrier layer

Rikuto Yoshida¹, 〇Ryosuke Kouno¹, Reo Ebihara¹, Tomoki Jinnai¹, Issei Watanabe^2,1, Yoshimi Yamashita², Ryuto Machida², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.National Institute of Info. & Com. Tech.)

Keywords:

HEMT

The RF characteristics of high electron mobility transistor (HEMT) can be discussed in detail using delay time analysis, and delay time reduction implies an increase in the current gain cutoff frequency (f_T). In this talk, the effect of barrier layer thinning in the epitaxial structure on device characteristics is clarified by delay time analysis, with the aim of delay time reduction of GaInSb HEMTs.