[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-52A-3] Double doped GaInSb HEMT with f_T and f_max of over 300 GHz

〇Rikuto Yoshida¹, Ryosuke Kouno¹, Reo Ebihara¹, Tomoki Jinnai¹, Issei Watanabe^2,1, Yoshimi Yamashita², Ryuto Machida², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.National Institute of Info. & Com. Tech.)

Keywords:

HEMT

In order to further increase the speed of GaInSb channel high electron mobility transistor (HEMT), we have attempted to introduce a double-doped structure into the barrier layer thinned epitaxial structure. By introducing a double-doped structure with Te δ-doped on the top and bottom of the channel layer, the increase of parasitic resistance in barrier-layer thinned GaInSb HEMTs was improved, and f_T=340 GHz and f_max=372 GHz were achieved by reducing the intrinsic delay time.