[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[24p-52A-5] Fabrication of GaN-on-diamond HEMT structures for low-cost and high heat dissipation

〇(M1)Hazuki Tomiyama¹, Hiroki Uratani², Yoshiki Sakaida², Yoshiki Nishibayashi³, Marika Takeuchi³, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Air Water Inc., 3.Sumitomo Electric Industries, Ltd.)

Keywords:

polycrystalline diamond

We have fabricated GaN on-diamond HEMTs structures using polycrystalline diamond on a backplate with the goal of achieving low-cost on-diamond structures to improve the heat dissipation of GaN-HEMTs. As a result, we successfully transferred AlGaN/GaN/3C-SiC layers onto a polycrystalline diamond substrate on a backplate by the surface-activated bonding method.