[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-52A-6] Polarity inversion layer for improving the performance of N-polar GaN/AlN HEMT

〇Aina Hiyama Zazuli¹, Daisuke Inahara¹, Taketo Kowaki¹, Minagi Miyamoto¹, Koki Hanasaku¹, Kai Fujii¹, Ryosuke Ninoki¹, Sora Nagata¹, Taisei Kimoto¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

Keywords:

polarity inversion

Two different AlN structures were grown on sapphire substrates using a polarity inversion layer, and their crystallinity was evaluated. Furthermore, the N-polar GaN/AlN structure was fabricated on both samples and then processed into FET. Focusing on carrier mobility and leakage current, the influence of the AlN structure on the electrical properties of GaN channels will be presented.