[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[24p-52A-7] Optimization of GaN channel in N-polar GaN/AlN high electron mobility transistor

〇Kai Fujii¹, Teketo Kowaki¹, Minagi Miyamoto¹, Aina Hiyama Zazuli¹, Koki Hanasaku¹, Taisei Kimoto¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

Keywords:

F value,crystal growth,AlN

The results of crystal growth of GaN/AlGaN/AlN structures that can be applied to HEMTs are summarized. Focusing on the F value during GaN growth of the channel layer, it was found that the F value affects the current value and electron mobility; optimization of the F value led to an increase in current value by about 1.4 times and electron mobility by 1.5 times.