[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[24p-52A-8] Structural investigation of AlN-based polarization doped FETs

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

Keywords:

AlN

We investgated stractrual dependence of electrical properties for AlN-based PolFETs with graded AlGaN under layer (UL), where lowest Al content x was varied from 0.6 to 0.77 in UL (Al: 1 → x) and graded AlGaN channel layer (Al: x → 1). Although the peak concentration of 3-dimensional electron slub (3DES) tends to increase with decreasing x, the width of 3DES decreased. Maximum drain current of 120 mA/mm was obtained for the PolFET with x = 0.66.