[24p-52A-1~19] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[24p-52A-9] Characterization of Current Transport and Temperature-dependent Barrier height in Si-doped AlN Schottky Barrier Diodes fabricated on Semi-Insulating SiC Substrate

〇AKihira Munakata¹, Masanobu Hiroki², Kazuhide Kumakura², Yoshitaka Taniyasu², Yoshiaki Nakano¹, Takuya Maeda¹ (1.Univ. of Tokyo, 2.NTT Basic Research Lab.)

Keywords:

AlN,barrier height,Schottky Barrier Diode

Current-voltage (I-V) and (C-V) characteristics of Si-doped AlN SBDs on SiC substrates were measured at different temperatures, and the barrier height tended to decrease with increasing temperature by choosing an appropriate frequency for the C-V measurement. Although the I-V measurements did not confirm the decrease in barrier height, good ideal factors were obtained, suggesting that transport by thermionic emission is dominant.