[24p-71B-1~8] Spintronics Technology: Frontiers of Tunnel Magnetoresistance Research and Memory Applications

1:40 PM - 2:10 PM JST(4:40 AM - 5:10 AM UTC)

[24p-71B-2] Physics and Device Applications of MgO-based Magnetic Tunnel Junctions

〇Shinji Yuasa¹, Takayuki Nozaki¹, Tatsuya Yamamoto¹, Tomohiro Nozaki¹, Yuki Hibino¹, Hiroyasu Nakayama¹, Tomohiro Ichinose¹, Sumito Tsunegi¹, Tomohiro Taniguchi¹, Kay Yakushiji¹, Hitoshi Kubota¹ (1.AIST)

Keywords:

spintronics,magnetic tunnel junction,magnetoresistance effect

We review physics and device applications of magnetic tunnel junctions (MTJs) with crystalline MgO tunnel barrier. We also report recent advances in voltage-controlled MRAM (VC-MRAM) and spin-orbit-torque MRAM (SOT-MRAM), which are expected to be next-generation non-volatile memory.