[24p-71B-1~8] Spintronics Technology: Frontiers of Tunnel Magnetoresistance Research and Memory Applications

2:40 PM - 3:10 PM JST(5:40 AM - 6:10 AM UTC)

[24p-71B-4] Development of tunnel magnetoresistive device materials using computational / data science

〇Shigemi Mizukami^1,2, Atsufumi Hirohata², Masafumi Shirai^3,2 (1.AIMR, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.RIEC, Tohoku Univ.)

Keywords:

spintronics,magnets,magnetoresistive devices

Tunnel magnetoresistive devices compose of magnet / insulating barrier / magnet tri-layered structure and exhibit tunnel magnetoresisitance. This device is utilized for commercial sensor and memory. To further explore functionality and innovative performance for this device, we are studying device materials with the aid of computational / data science, such as Bayesian optimization and ab-initio computation. We will talk about our exploration and development of device materials for practical spintronic applications.