[24p-71B-1~8] Spintronics Technology: Frontiers of Tunnel Magnetoresistance Research and Memory Applications

4:55 PM - 5:25 PM JST(7:55 AM - 8:25 AM UTC)

[24p-71B-8] 14nm MTJ with stacked storage layer for high-density STT-MRAM

〇Masaru Toko¹, Hideyuki Sugiyama¹, Kamata Chikayoshi¹, Itai Shogo¹, Takashima Rina¹, Takeo Koike¹, Nakayama Masahiko¹ (1.Kioxia Corp.)

Keywords:

MRAM,High density,storage class memory

We demonstrate a novel 14nm magnetic tunnel junction (MTJ) with high-retention and high-speed writing in Spin-Transfer-Torque (STT) MRAM. We developed Accelerated STT-Switching and High-Retention MTJ (AccelHR-MTJ) using storage layer composed of high-retention doped Co-Pt alloy layer on CoFeB switching accelerating layer. Excellent performances such as high-retention of >10 years at 90℃ and sub-ns high-speed writing were achieved in our 14nm AccelHR-MTJ. This MTJ technology enables high-density, high-speed, and low-cost 14nm STT-MRAM toward storage class memory applications.