Presentation Information
[24p-P08-8]Analysis of gas rarefaction phenomenon in deep oscillation magnetron sputtering (DOMS) using an optical-emission delay time measurement
〇Eisuke Yokoyama1, Kaede Horiuchi1, Yusei Takahashi1, Yuki Nakagawa1, Nobuo Nishimiya1, Masaomi Sanekata1, Masahide Tona2, Hiroaki Yamamoto2, Keizo Tsukamoto2, Kiyokazu Fuke3, Keijiro Ohshimo4, Fuminori Misaizu4 (1.Tokyo Polytech. Univ., 2.Ayabo Corp., 3.Kobe Univ., 4.Tohoku Univ.)
Keywords:
deep oscillation magnetron sputtering,optical emission spectroscopy,gas rarefaction phenomenon
Deep oscillation magnetron sputtering (DOMS) consists of long macro-pulses with short repeating micropulse. In DOMS, gas density fluctuations due to the gas rarefaction phenomenon change the discharge characteristics for each micropulse, which may pose a problem and/or a new controllability in the deposition of a homogeneous thin film. In the present study, we performed a temporal and spatial analysis of the gas density distribution in a correlated manner by measuring the optical-emission delay time of Ar using plasma optical emission spectroscopy. It was confirmed that the ionization rate of sputtered Ti particles varies with the variation of the emission delay time. The effect of gas rarefaction phenomenon of these results will be discussed at the conference.