[24p-P09-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[24p-P09-5] Precursor interactions for SiC_xN_yO_z thin film formation by room temperature PECVD

Hiroki Kawakami¹, Kenta Hori¹, Toru Watanabe¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:

PECVD,SiCNO,Precursor interactions

The interactions between argon, nitrogen and monomethylsilane for room temperature PECVD were evaluated based on the rate theory. The fourth order polynomials of mathematical product of partial pressure and electric current were taken into account for describing the film thiclness and conposition behavior.