[24p-P11-1~2] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[24p-P11-2] Reactive Force Field Molecular Dynamics Analysis
of Temperature Dependence of Oxide Film Thickness

〇(M1)Kenta Sekiguchi^1,2, Naoya Uene², Daisuke Ohori², Kazuhiko Endo², Takashi Tokumasu² (1.Tohoku Univ., 2.Inst. of Fluid Science, Tohoku Univ.)

Keywords:

group IV semiconductor materials,ReaxFF MD,oxidation