Session Details

[24p-P11-1~2]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 24, 2024 4:00 PM - 6:00 PM JST
Sun. Mar 24, 2024 7:00 AM - 9:00 AM UTC
P11 (Building No. 9)

[24p-P11-1]Mechanism of electric conduction in SiO2 films under X-ray irradiation

〇(M2)Shuhei Murata1,2, Hiroshi Nohira1, Daisuke Kobayashi2, Kazuyuki Hirose2 (1.Tokyo City Univ., 2.ISAS/JAXA.)

[24p-P11-2]Reactive Force Field Molecular Dynamics Analysis
of Temperature Dependence of Oxide Film Thickness

〇(M1)Kenta Sekiguchi1,2, Naoya Uene2, Daisuke Ohori2, Kazuhiko Endo2, Takashi Tokumasu2 (1.Tohoku Univ., 2.Inst. of Fluid Science, Tohoku Univ.)