Presentation Information
[24p-P12-2]Effect of additional ethanol vapor in NH3 gas annealing on reduction of residual OH groups
in low-temperature Si oxide films
〇Susumu Horita1 (1.JAIST)
Keywords:
Si oxide film,low-temperature formation,OH
It is desired that deposited Si oxide films are formed at lower temperature. But, their dielectric property is gotten worse because large amounts of residual OH bonds exist in them. For this problem, using not only a main annealing gas of NH3 and N2 mixed gas, which has already been reported to be very effective for reduction of OH bonds, but also ethanol vapor gas, we tried to anneal an Si oxide film deposited at 190 oC, 10 min. As a result, with a trial annealing condition of temperature of 130 oC and total time of 60 min, we can reduce the amount of residual OH bonds more than that without ethanol vapor.