[24p-P12-1~3] 13.3 Insulator technology

[24p-P12-3] Activation energy for inter-site jumping of ions and molecules in SiN_x and SiO_x films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Keywords:

moisture resistance,silicon nitride,molecular orbital calculation

In order to analyze the influence of ions on the moisture resistance deterioration of the protective film, we focused on the movement of ions and molecules in SiNx and SiOx films, and analyzed the interstitial and intervacancy movement (jump) from the perspective of activation energy.