Presentation Information
[24p-P16-11]Effect of preparation condition of NiO thin film on β-Ga2O3(-201) from solution
〇(M1)Satomi Yamawaki1, Arifumi Okada1 (1.Kyoto Inst. Tech.)
Keywords:
gallium oxide,sol-gel- method,preparation condition
Beta-type gallium oxide has many advantages to apply next-generation power devices because of its excellent properties. However, this material is difficult to be a p-type semiconductor. A promising approach is to implement hetero structures using another material. In this study, nickel oxide films were prepared from solutions via sol-gel method. Nickel acetate tetrahydrate and lithium acetate tetrahydrate were dissolved into some solvent mixutures with different viscosities. Monoethanolamine was added into the solution. We used fused silica and beta-gallium oxide(-201) substrates. The film preparation procedure consists of spin coating, two-step annealing for solvent evaporation and nickel oxide formation from the precursor complexes, and final annealing for crystallization of the nickel oxide. It was found that the elimination of some annealing processes drastically improves the homogeneity of the prepared films.