Presentation Information
[24p-P16-14]Reduction of oxygen vacancy in SnO2:N thin films prepared by RF magnetron sputtering and characterization of their composition in the bulk
〇(M2)Takuma Kawaguchi1, Ryuji Oishi2, Maki Shimizu2, Hijikata Yasuto2, Shinya Aikawa1 (1.Kogakuin Univ., 2.Saitama Univ.)
Keywords:
oxide semiconductor,nitrogen doping,nitrogen sputtering