[24p-P16-1~41] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[24p-P16-19] Improvement of transparent conductivity for Ti-doped ZnO thin films by annealing

〇(M1)Naoya Utsu¹, Ichiro Takano² (1.Kogakuin Univ., 2.Kogakuin Uni.)

Keywords:

Transparent Conductive Films,Zinc Oxide,Titanium

Most of transparent conductive films used in liquid crystal displays or other devices are ITO, which contains in of a rare metal, and alternative materials are being researched. In this study, we focused on ZnO thin films doped with Ti. The samples were prepared by reactive sputtering at a room temperature, and transparency, electrical resistivity and semiconductor properties were investigated. Furthermore, by annealing the samples, the transmittance of all films increased by 5 points over ZnO to 85 %. The lowest resistivity of 2.82×10^-2 Ωcm was obtained with Ti doping of 3.1 at.%.