[24p-P16-1~41] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[24p-P16-29] Deep UV irradiated B-doped In₂O₃ TFTs with low-temperature annealing

〇(M1)Shinri Yamadera¹, Kanta Kibishi¹, Shinya Aikawa¹ (1.Kogakuin Univ)

Keywords:

TFT,low temperature annealing,Hysteresis