Presentation Information
[24p-P16-35]The effect of post deposition annealing on crystal structures and deep-UV responses of mist CVD grown amorphous Ga2O3 thin films
〇(M1)Manami Miyazaki1, Iori Yamasaki1, Yuma Tanaka1, Masatoshi Koyama1, Akihiko Fuji1, Toshihiko Maemoto1 (1.Osaka Inst. Tech.)
Keywords:
Gallium oxide,mist CVD,photodetector
Ga2O3 has a band gap around 5.0 eV and has been attracting attention as a candidate material for deep ultraviolet photodetectors. In this study, we discuss on the physical properties of an amorphous Ga2O3 and its annealed thin films those were grown on c-sapphire substrates by mist CVD. The response properties for deep-UV irradiation of metal-semiconductor-metal photodetectors fabricated on these films are also discussed.