Presentation Information
[24p-P16-4]The influence of deposition pressure and temperature on rutile GeO2 thin films
〇Fumiyoshi Nishiyama1, Takashi Inomata1, Hirokazu Izumi2 (1.Kisan Kinzoku Chemicals, 2.Hyogo Pref. Inst of Tech.)
Keywords:
rutile GeO2
We investigated the influence of pressure and temperature on the fabrication of rutile GeO2 thin films on c-,m-,and r-plane sapphire substrates by pulsed laser deposition, with the aim of developing doped rutile GeO2 thin films.
In this study, rutile GeO2 thin films were successfully grown on various sapphire substrates under the suitable conditions.
Detailed observation of GeO2 thin films grown on m-sapphire substrates revealed that, with increasing O2 pressure during deposition, the film structures changed from smooth to rough and X-ray diffraction measurements showed that the peak of the rutile GeO2 (002) plane decreased.
In this study, rutile GeO2 thin films were successfully grown on various sapphire substrates under the suitable conditions.
Detailed observation of GeO2 thin films grown on m-sapphire substrates revealed that, with increasing O2 pressure during deposition, the film structures changed from smooth to rough and X-ray diffraction measurements showed that the peak of the rutile GeO2 (002) plane decreased.